 |
|
|
|
|
Maxim >
Company >
Process Technologies and Wafer Fab
|
|
|
SiGe Bipolar/BiCMOS
| Innovative Process Characteristics |
- Industry's richest suite of high-performance SiGe Bipolar and passive devices allows complete block diagram integration in multi-GHz frequencies, such as an entire RF transceiver on a chip.
- Passives are optimized for RF, for example super high-Q inductors and high-tuning ratio Varactors, resulting in lowest phase noise.
- Laser trimming of thin film resistors results in tighter distributions on many specifications, such as better offset matching, narrow VCO center frequencies, and superior S22.
- Silicon-on-Insulator enables faster rise times for high-speed circuits and eliminates circuit latchup problems.
- Maxim's internal fab delivers Silicon-Germanium performance at CMOS pricing.
|
| Applications |
- Clocks
- Equalizers
- Laser Drivers
- Transimpedence Amplifiers
- Limiting Amps
- Wireless Transceivers
|
|
|
|
|
|
|
|
