The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Key Features
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% VCC operating range (DS1220AD)
Optional ±5% VCC operating range
(DS1220AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
Notes: **This pricing is BUDGETARY, for comparing similar parts. Prices are in
U.S. dollars and subject to change. Quantity pricing may vary
substantially and international prices may differ due to local
duties, taxes, fees, and exchange rates. For volume-specific prices
and delivery, please see the price and availability page
or contact an authorized distributor.
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